An active ultrafast formation and modulation of dual-band plasmon-induced transparency (PIT) effect is theoretically and experimentally studied in a novel metaphotonic device operating in the terahertz regime, for the first time, to the best of our knowledge. Specifically, we designed and fabricated a triatomic metamaterial hybridized with silicon islands following a newly proposed modulating mechanism. In this mechanism, a localized surface plasmon resonance is induced by the broken symmetry of a C2 structure, acting as the quasi-dark mode. Excited by exterior laser pumps, the photo-induced carriers in silicon promote the quasi-dark mode, which shields the near-field coupling between the dark mode and bright mode supported by the triatomic metamaterial, leading to the dynamical modulation of terahertz waves from individual-band into dual-band PIT effects, with a decay constant of 493 ps. Moreover, a remarkable slow light effect occurs in the modulating process, accompanied by the dual-transparent windows. The dynamical switching technique of the dual-band PIT effect introduced in this work highlights the potential usefulness of this metaphotonic device in optical information processing and communication, including multi-frequency filtering, tunable sensors, and optical storage.

Recently reported plasmon-induced transparency (PIT) in metamaterials endows the optical structures in classical systems with quantum optical effects. In particular, the nonreconfigurable nature in metamaterials makes multifunctional applications of PIT effects in terahertz communications and optical networks remain a great challenge. Here, we present an ultrafast process-selectable modulation of the PIT effect. By incorporating silicon islands into diatomic metamaterials, the PIT effect is modulated reversely, depending on the vertical and horizontal configurations, with giant modulation depths as high as 129% and 109%. Accompanied by the enormous switching of the transparent window, remarkable slow light effect occurs.

We experimentally demonstrate for the first time an active all-optical ultrafast modulation of electromagnetically induced transparency-like effect in a hybrid device of sapphire/Si/metamaterial. From numerical simulations, it can be deducted that the tuning process is attributed to the coupling between the dark mode existing in split-ring resonators and the bright mode existing in cut wire resonators. The transmission amplitude modulation is accompanied by the slow-light effect. In addition, the ultrafast formation process is measured to be as fast as 2 ps. This work should make an important contribution to novel chip-scale photonic devices and terahertz communications.

Metamaterials play an important role in the modulation of amplitude and group delay in the terahertz (THz) regime on account of their optical properties, which are rare in natural materials. Here an ultrafast anisotropic switch of the plasmon-induced transparency (PIT) effect is experimentally and numerically demonstrated by metamaterial devices composed of two pairs of planar split-ring resonators and a pair of closed-ring resonators. By integration with a germanium (Ge) film, a recovery time of 3 ps and a decay constant of 785 fs are realized in the metadevice. Stimulated by the exterior optical pump, the PIT windows at different frequencies are switched off with an excellent property of slow light for vertical and horizontal THz polarizations, realizing an astonishing modulation depth as high as 99.06%. This work provides a new platform for ultrafast anisotropic metadevices tunable for amplitude and group delay.